Dr. N. Nanda Kumar Reddy
Qualification : Ph.D. (S V University, Tirupati)
Designation : Assoc. Professor
Email: [email protected]
Details of Educational Qualification:
| Course | Specialization | Branch | Institute / University | Year of Passing |
|---|---|---|---|---|
| Ph.D. | Studies on Electrical & Structural Properties of GaN based Schottky Barrier Diodes | Material Science | Sri Venkateswara University | 2013 |
| M.Phil. | Schottky Contacts to InP Semiconductor at Cryogenic Temperatures | Material Science | Sri Venkateswara University | 2010 |
| M.Sc. | Condensed matter physics and electronics | Physics | Sri Venkateswara University | 2006 |
| B.Sc. | Maths, Physics, Computer Science | M.P.C.S | Sri Venkateswara University | 2003 |
Research Areas:
- Thin Film Based Ultraviolet/Broadband Photodetector devices using III-V Compound and Elemental Semiconductors, Gas Sensors and Nanotechnology.
Research Identifiers:
- Scopus Link: https://www.scopus.com/authid/detail.uri?authorId=36682766600
- Vidwan Link: https://mits.irins.org/profile/244426
- Google scholar Link: https://scholar.google.com/citations?user=vEevIYkAAAAJ&hl=en
- h-Index (As per Scopus Data) : 15
Publication Details:
| S.No | Publication Affiliation | Academic Year | Author Position | Full Details of Research Publication | Indexing | Article/ Conference/ Book/ Book Chapter | Journal Quartile (Q1/Q2/Q3/Q4) |
|---|---|---|---|---|---|---|---|
| 1 | MITS | 2025-26 | 4 | Facile single-step electrodeposition of flower-shaped Cu doped ZnO nanostructures for optical, photoluminescence and photocatalytic assessment, Optical Materials, 169 (2026) 117624. | SCI | Article | Q1 |
| 2 | MITS | 2025-26 | 1 | Improved Ultraviolet Photodetector Performance using Sol–Gel Spin Coated Cost-Effective TiO2 Nano Belts on p-Si, Silicon, 17 (2025) 4395-4407. | SCI | Article | Q2 |
| 3 | MITS | 2025-26 | 1 | Improved ultraviolet photodetection and oxygen gas sensing performance using CeO2 rare-earth oxide thin films deposited on GaN, Physica B: Condensed Matter. 714 (2025) 417514. | SCI | Article | Q1 |
| 4 | MITS | 2024-25 | 7 | Optimizing energy transfer in Er3+/Yb3+ Co-doped heavy metal oxide bismuth borate glasses for C-band optical amplifiers, Optical Materials. 163 (2025) 116939. | SCI | Article | Q1 |
| 5 | MITS | 2024-25 | 6 | Eco-Innovation in Bi-Metallic Oxides: Pioneering Solutions for Dye Contamination and Bacterial Challenges, Journal of Cluster Science. 36 (2025) 86. | SCI | Article | Q2 |
| 6 | MITS | 2024-25 | 4 | Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications, Journal of Materials Science: Materials in Electronics. 36 (2025) 430. | SCI | Article | Q2 |
| 7 | MITS | 2024-25 | 6 | Enhancing Ni/Cr/n-GaN schottky junction performance using a novel Bi2O3 insulating layer for advanced optoelectronic device applications, Materials Science and Engineering: B. 313 (2025) 117885. | SCI | Article | Q1 |
| 8 | MITS | 2024-25 | 6 | Self-powered broadband ultraviolet photodetector based on MoSe2/n-GaN heterojunction, Journal of Alloys and Compounds. 1014 (2025) 178813. | SCI | Article | Q1 |
| 9 | MITS | 2024-25 | 1 | Influence of high-k La2O3 interfacial oxide layer on the performance of GaN based Schottky barrier ultraviolet-B and A photodetection sensors, Optical Materials. 158 (2025) 116499. | SCI | Article | Q1 |
| 10 | MITS | 2024-25 | 7 | Effects of Zn doped MoO3 nanocomposite interlayer on electrical and surface chemical state properties of Ni/Cr/n-GaN Schottky junction, Materials Science and Engineering: B. 308 (2024) 117602 | SCI | Article | Q2 |
| 11 | MITS | 2024-25 | 5- Corresponding | Realization of CO2 gas sensors and broadband photodetectors using metal/high-k CeO2/p-Si heterojunction, Ceramics International. 50 (2024) 31845-31858. | SCI | Article | Q1 |
| 12 | MITS | 2024-25 | 6 | Optical, vibrational, and photoluminescence properties of holmium-doped boro-bismuth-germanate glasses, Luminescence. 39 (2024) e4822. | SCI | Article | Q2 |
| 13 | MITS | 2023-24 | 1 | Highly Performing MSM Type Ag/n-titanium Dioxide Nanotubes/p-Si Heterojunction Based Ultraviolet-A Photodetectors, Silicon. 16 (2024) 2815–2826. | SCI | Article | Q2 |
| 14 | MITS | 2023-24 | 4 | Enhanced pursuance of dye-sensitized solar cell for indoor and outdoor stability using reduced graphene oxide @ Mn2O3 nanocomposite, Carbon Letters. 34 (2024) 1021-1030 | SCI | Article | Q1 |
| 15 | MITS | 2023-24 | 1 | Enhanced self-driven ultraviolet photodetection performance of high-k Ta2O5/GaN heterostructure, Materials Science in Semiconductor Processing. 170 (2024) 107954. | SCI | Article | Q1 |
| 16 | MITS | 2023-24 | 7 | Yttria activated lanthanum -barium titanate ceramic electrode for fast charging supercapacitor applications, Journal of Molecular Structure. 1294 (2023) 136352. | SCI | Article | Q2 |
| 17 | MITS | 2023-24 | 3 | Flexible Photocapacitor Device Using Reduced Graphene Oxide@MOS2 Nano Sheets for Future Flexible and Wearable Electronic and IoT Devices, DOI: 10.1109/PowerMEMS59329.2023.10417597 | SCI | Article | Q4 |
| 18 | MITS | 2023-24 | 10 | Structure, morphology, photonconversion and energy transfer characteristics of Er3+/Yb3+:BaYF5 nanocrystals synthesized by hydrothermal method for photovoltaics, Ceramics International. 49 (2023) 26879-26889 | SCI | Article | Q1 |
| 19 | MITS | 2022-23 | 4 | Evaluation of Photosensing Parameters of Au/polystyrene/n-Si Heterojunction Based Self-Powered Organic Broadband Photodetectors, Silicon. 15 (2023) 5623-5633. | SCI | Article | Q2 |
| 20 | MITS | 2022-23 | 1 | UV-to-NIR broadband photodetecting sensors using n-TiO2 nanorods/p-Si heterojunction in lateral and vertical configurations, Applied Physics A. 129 (2023) 412. | SCI | Article | Q2 |
| 21 | MITS | 2022-23 | 1 | Self-powered and improved photoresponsive broadband photodetecting sensors using Au/NiFe2O4/p-Si heterojunction architecture, Materials Science in Semiconductor Processing. 156 (2023) 107266. SCI Article Q1 | SCI | Article | Q1 |
| 22 | MITS | 2022-23 | 3 | Synthesis and photocatalytic activity of bismuth carbonate micro-nanoplates, Inorganic Chemistry Communications. 143 (2022) 109820. | SCI | Article | Q1 |
| 23 | MITS | 2021-22 | 4 | INVESTIGATIONS ON FUNCTIONAL PROPERTIES OF Al0.8 EuyLa0.2−yTiO3 (y=0.01−0.04) NANOPARTICLES SYNTHESIZED BY HYDROTHERMAL METHOD, Surface Review and Letters. 29 (2022) 2250097. | SCI | Article | Q3 |
| 24 | MITS | 2021-22 | 1 | Enhanced photoresponse performance in GaN based symmetric type MSM ultraviolet-A and MIS ultraviolet-A to C photodetectors, Sensors and Actuators A: Physical. 339 (2022) 113502. | SCI | Article | Q1 |
| 25 | MITS | 2021-22 | 1 | Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN, Materials Science in Semiconductor Processing. 138 (2022) 106297. | SCI | Article | Q1 |
| 26 | MITS | 2021-22 | 1 | A Study on Annealing Process Influenced Electrical Properties of Ni/CeO2/p-Si/Al Schottky Barrier Diodes, Macromolecular Symposia. 398 (2021). | SCI | Article | Q3 |
| 27 | MITS | 2020-21 | 3 | Onion-Ring-like Carbon and Nitrogen from ZIF-8 on TiO2/Fe2O3 Nanostructure for Overall Electrochemical Water Splitting, J. Phys. Chem. Lett. 12, 25 (2021) 5909–5918. | SCI | Article | Q1 |
| 28 | MITS | 2020-21 | 4 | Electrochemical performance of coin cell-type symmetric supercapacitor electrode consisting of three-dimensional molybdenum disulfide microflowers, Materials Letters. 285 (2021) 129203. | SCI | Article | Q2 |
| 29 | MITS | 2-corresponding | Statistical analysis of current–voltage characteristics in Au/Ta2O5/n-GaN Schottky barrier heterojunction using different methods, Applied Physics A. 127 (2021) 46. | SCI | Article | Q2 | |
| 30 | MITS | 2020-21 | 3 | Role of excitation wavelength and dopant concentration on white light tunability of dysprosium doped titania-fluorophosphate glasses, Optical Materials. 111 (2021) 110593. | SCI | Article | Q1 |
| 31 | MITS | 2020-21 | 1 | High performance, self-powered and thermally stable 200–750 nm spectral responsive gallium nitride (GaN) based broadband photodetectors, Solar Energy Materials and Solar Cells. 225 15 (2021) 111033. | SCI | Article | Q1 |
| 32 | MITS | 2020-21 | 5 | Influence of Ga doping on structural, optical and electrical properties of transparent conducting SnO2 thin films, Optik. 226 (2021) 165859. | SCI | Article | Q2 |
| 33 | MITS | 2020-21 | 3-corresponding | Evaluation of electrical parameters of Ni/n-type Si Schottky barrier diodes using polyvinyl alcohol (PVA) as an interfacial layer,AIP Conf. Proc. 2269 (2020) 030098. | SCI | Article | |
| 34 | MITS | 2020-21 | 1 | Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector, Materials Science in Semiconductor Processing. 117 (2020) 105190. | SCI | Article | Q1 |
| 35 | MITS | 2020-21 | 4 | Near infrared broadband and visible upconversion emissions of erbium ions in oxyfluoride glasses for optical amplifier applications, Optics & Laser Technology. 127 (2020) 106167 | SCI | Article | Q1 |
| 36 | MITS | 2019-20 | 5 | Optical and spectroscopic properties of Ho3+-doped fluorophosphate glasses for visible lighting applications, Materials Research Bulletin. 124 (2020) 110753. | SCI | Article | Q1 |
| 37 | MITS | 2019-20 | 1 | Analysis of Double Gaussian Distribution at the Interface of Ni/Ta2O5/P-Si Schottky Barrier Diodes Using Temperature Dependent Current-Voltage (I-V) Measurements, Silicon. 13 (2021) 65-71. | SCI | Article | Q2 |
| 38 | MITS | 2019-20 | 2 | Transformation of g-C3N4 into onion like carbon on nickel nanoparticles for ultrafast hydrogenation, Materials Chemistry and Physics. 240 (2020) 122157 | SCI | Article | Q1 |
| 39 | MITS | 2018-19 | 1 | An assessment on electrical characterization of ni/n-si schottky rectifiers with and without Ta2O5 interfacial oxide layer, Surface Review and Letters. 26 (2019) 1950073. | SCI | Article | Q3 |
| 40 | MITS | 2018-19 | 1 | Evaluation of temperature dependent electrical transport parameters in Fe3O4/SiO2/n-Si metal–insulator-semiconductor (MIS) type Schottky barrier heterojunction in a wide temperature range, Journal of Materials Science: Materials in Electronics. 30 (2019) 8955-8966. | SCI | Article | Q2 |
| 41 | MITS | 2018-19 | 2-corresponding | Impact of annealing process on electrical characteristics of Ni Schottky rectifiers fabricated on p-type Si, J. Indian Chem. Soc. 96 (2019) 85-89 | SCI | Article | Q4 |
| 42 | MITS | 2017-18 | 1 | Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure, Silicon. 11 (2019) 159-164. | SCI | Article | Q2 |
| 43 | MITS | 2017-18 | 2-corresponding | Influence of substrate bias voltage on crystallographic structure, optical and electronic properties of Al/(Ta2O5)0.85(TiO2)0.15/p-Si MIS Schottky barrier diodes fabricated by dc magnetron sputtering, Materials Science in Semiconductor Processing. 76 (2018) 80-86. | SCI | Article | Q1 |
| 44 | MITS | 2017-18 | 1 | Zr-doped SnO2 thin films synthesized by spray pyrolysis technique for barrier layers in solar cells, Applied Physics A. 123 (2017) 761. | SCI | Article | Q2 |
| 45 | MITS | 2017-18 | 2 | Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semiconductor structure, Journal of Alloys and Compounds. 718 (2017) 104-111. | SCI | Article | Q1 |
| 46 | MITS | 2016-17 | 2 | Thickness Dependent Structural and Electrical Properties of Magnetron Sputtered Nanostructured CrN Thin Films, Mat. Res. 20 (3) (2017) 712-717 | SCI | Article | Q3 |
| 47 | MITS | 2015-16 | 3 | FAbrication of cast aluminium-silicon (al-si) and aluminium-magnesium (al-mg) alloys and their properties, Acta Metallurgica Slovaca. 22 (2016) 212-221. | SCI | Article | Q3 |
| 48 | MITS | 2015-16 | 2 | Structural, optical and electrical properties of DC reactive magnetron sputtered (Ta2O5)1−x(TiO2)x thin films, Ceramics International. 42 (2016) 18870-18878 | SCI | Article | Q1 |
| 49 | MITS | 2013-14 | 2 | Influence of post deposition annealing on structural and electrical properties of magnetron sputtered Al/(Ta2O5)0.85(TiO2)0.15/p-Si structure, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 16 (2014) 11-12. | SCI | Article | Q4 |
| 50 | MITS | 2013-14 | 2 | Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors, Surface and Interface analysis. 46 (2014) 465-471. | SCI | Article | Q2 |
| 51 | Others | 2012-13 | 2 | Current transport mechanisms in Ru/Pd/n-GaN Schottky barrier diodes and deep level defect studies, Superlattices and Microstructures. 52 (2012) 484-499. | SCI | Article | Q2 |
| 52 | Others | 2011-12 | 1 | Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I–V–T and C–V–T measurements. Bulletin of Materials Science. 35 (2012) 53-61. | SCI | Article | Q2 |
| 53 | Others | 2011-12 | 1 | Influence of rapid thermal annealing effect on electrical and structural properties of Pd/Ru Schottky contacts to n-type GaN, Materials Chemistry and Physics. 130 (2011) 1000-1006. | SCI | Article | Q1 |
| 54 | Others | 2011-12 | 1 | Double Gaussian Distribution of Inhomogeneous Barrier Height in Ru/Pt/n‐GaN Schottky Barrier Diodes, AIP Conf. Proc. 1349 (2011) 1067-1068. | SCI | Conference Proceedings | Others |
| 55 | Others | 2010-11 | 1 | Electrical characteristics and interfacial reactions of rapidly annealed Pt/Ru Schottky contacts on n-type GaN, Physica Status Solidi A. 208 (2011) 1670-1677 | SCI | Article | Q2 |
| 56 | Others | 2010-11 | 3 | Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T And C-V-T Measurements, Journal of Modern Physics 02 (03) (2011) 113-123. | SCOPUS | Article | Q4 |
| 57 | Others | 2010-11 | 1 | Electrical transport parameters of Pt/Au Schottky contacts on n-type InP in a wide temperature range, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS. 4 (2010) 1229- 1238. | SCI | Article | Q2 |
| 58 | MITS | 2012-13 | 1 | A Study on Platinum/Gold Schottky Contacts to n-type Indium Phosphide” German publisher LAP (Lambert Academic Publishing) ISBN-13: 978-3-659-45174-4, ISBN-10: 3659451746, EAN: 9783659451744, August, 2013. | Book | ||
| 59 | MITS | 2015-16 | 1 | Studies of Pt/Ru and Pd/Ru Schottky contacts to n-type Gallium Nitride” Scholar’s Press, Germany, ISBN: 978-3-659-84344-0. October, 2016. | Book | ||
| 60 | MITS | 2017-18 | 2 | Studies on Cast Aluminium-Silicon and Aluminium-Magnesium Alloys” VSRD Academic Publishing, ISBN-13: 978-93-87610-08-8 July, 2018. | Book | ||
| 61 | MITS | 2021-22 | 1 | Types of Photodetectors and their applications” Nova Science Publishers, USA. With DOI: https://doi.org/10.52305/QTIQ1152. | SCOPUS | BOOK CHAPTER |
Research Projects & Events
| S.No | Affiliation | Academic Year | Funded Project /Event | Role | Title of the Project/Event | Amount in Rs. /- | Funding Agency |
|---|---|---|---|---|---|---|---|
| 1 | MITS | 2018-19 | Funded Project | Principal Investigator | Development of High Photoresponsivity Gallium Nitride-Based Metal/Insulator/Semiconductor (MIS) Schottky Barrier Ultraviolet Photodetectors | 43,89,784 | DST-SERB, ECRA-India. |
Patents
| S.No | Affiliation | Academic Year | Application ID | Title of the Patent | Status |
|---|---|---|---|---|---|
| 1 | MITS | 2024-25 | United states patent No: US 12268033 B1, April-2025 | Self-powered ultraviolet photodetection performance using Au/Ta2O5/GAN: metal-insulator-semiconductor (MIS) heterostructure | Published |
| 2 | MITS | 2024-25 | Indian Patent Application No. 202541023139, March-2025 | A heterojunction for optoelectronic system and a method of fabrication thereof | Published |
Awards/Achievements
- Early Career Research Awardee 2018, Department of Science and Technology-SERB, Govt. of India.