Dr. N. Nanda Kumar Reddy
Qualification : Ph.D. (S V University, Tirupati)
Details of Educational Qualification:
| Course | Specialization | Group | College Name/University | Year of Passing |
|---|---|---|---|---|
| Ph.D. | Studies on Electrical & Structural Properties of GaN based Schottky Barrier Diodes | Material Science | Sri Venkateswara University | 2013 |
| M.Phil. | Schottky Contacts to InP Semiconductor at Cryogenic Temperatures | Material Science | Sri Venkateswara University | 2010 |
| M.Sc. | Condensed matter physics and electronics | Physics | Sri Venkateswara University | 2006 |
| B.Sc. | Maths, Physics, Computer Science | M.P.C.S | Sri Venkateswara University | 2003 |
Research Project
| S.No | Name of the Principal Investigator | Department | Sanctioned Letter Number with date | Project Title | Duration of the Project | Total Sanctioned Amount |
|---|---|---|---|---|---|---|
| 1 | Dr.Nanda Kumar Reddy | Physics | File No. ECR/2017/002868, dated:20.09.2018 | Development of High Photoresponsivity Gallium Nitride-Based Metal/Insulator/Semiconductor (MIS) Schottky Barrier Ultraviolet Photodetectors | 3 years | Rs.43,89,784/- |
List of Publications
| S.No | Title of the Paper | Full Details of Journal Name / Conference Name, Volume number, page number, Date | Overall similarity % Index received from Turnitin |
|---|---|---|---|
| 1 | Flexible Photocapacitor Device Using Reduced Graphene Oxide@Mos2 Nano Sheets For Future Flexible And Wearable Electronic And Iot Devices | IEEE 22nd International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS) | 979-8-3503-4421-9/23/ DOI: 10.1109/POWERMEMS59329.2023.10417597 | |
| 2 | Highly Performing MSM Type Ag/n‑titanium Dioxide Nanotubes/p‑Si Heterojunction Based Ultraviolet‑A Photodetectors | Silicon, https://doi.org/10.1007/s12633-024-02877-1 | |
| 3 | Enhanced pursuance of dye‑sensitized solar cell for indoor and outdoor stability using reduced graphene oxide @ Mn2O3nanocomposite | Carbon Letters, https://doi.org/10.1007/s42823-023-00646-5 | |
| 4 | Enhanced self-driven ultraviolet photodetection performance of high-kTa2O5/GaN heterostructure | Materials Science in Semiconductor Processing 170 (2024) 107954 | |
| 5 | Yttria activated lanthanum -barium titanate ceramic electrode for fast charging supercapacitor applications | Journal of Molecular Structure, Volume 1294, Part 2, 15 December 2023, 136352, https://doi.org/10.1016/j.molstruc.2023.136352 |
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| 6 | Structure, morphology, photonconversion and energy transfer characteristics of Er3+/Yb3+:BaYF5 nanocrystals synthesized by hydrothermal method for photovoltaics | Ceramics International, Volume 49, Issue 16, 15 August 2023, Pages 26879-26889 | |
| 7 | Evaluation of Photosensing Parameters of Au/polystyrene/n‑Si Heterojunction Based Self‑Powered Organic Broadband Photodetectors | Springer Nature B.V. 2023, Silicon, https://doi.org/10.1007/s12633-023-02458-8 | |
| 8 | UV‑to‑NIR broadband photodetecting sensors using n‑TiO 2 nanorods/p‑Si heterojunction in lateral and vertical configurations | Applied Physics A (2023) 129:412, https://doi.org/10.1007/s00339-023-06649-3 | |
| 9 | Self-powered and improved photoresponsive broadband photodetecting sensors using Au/NiFe2O4/p-Si heterojunction architecture | Materials Science in Semiconductor Processing 156 (2023) 107266, https://doi.org/10.1016/j.mssp.2022.107266 | |
| 10 | Enhanced photoresponse performance in GaN based symmetric type MSM ultraviolet-A and MIS ultraviolet-A to C photodetectors | Sensors and Actuators A: Physical Volume 339, 1 June 2022, 113502, https://doi.org/10.1016/j.sna.2022.113502 | |
| 11 | Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN | Materials Science in Semiconductor Processing, Volume 138, February 2022, 106297, https://doi.org/10.1016/j.mssp.2021.106297 | |
| 12 | Onion-Ring-like Carbon and Nitrogen from ZIF‑8 on TiO2/Fe2O3Nanostructure for Overall Electrochemical Water Splitting | The Journal of Physical Chemistry Letters, J.Phys.Chem.Lett.2021, 12, 5909−5918, https://doi.org/10.1021/acs.jpclett.1c01 | |
| 13 | A Study on Annealing Process Influenced Electrical Properties of Ni/CeO2/p-Si/Al Schottky Barrier Diodes | Macromol. Symp. 2021, 398, 2000228, https://doi.org/10.1002/masy.202000228 | |
| 14 | Role of excitation wavelength and dopant concentration on white light tunability of dysprosium doped titania-fluorophosphate glasses | Optical Materials 111 (2021) 110593, https://doi.org/10.1016/j.optmat.2020.110593 |
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| 15 | Influence of Ga doping on structural, optical and electrical properties of transparent conducting SnO2 thin films | Optik-International Journal for Light and Electron Optics 226 (2021) 165859, https://doi.org/10.1016/j.ijleo.2020.165859 |
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| 16 | High performance, self-powered and thermally stable 200–750 nm spectral responsive gallium nitride (GaN) based broadband photodetectors | Solar Energy Materials & Solar Cells 225 (2021) 111033, http://www.elsevier.com/locate/solmat |
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| 17 | Electrochemical performance of coin cell-type symmetric supercapacitor electrode consisting of three-dimensional molybdenum disulfide microflowers | Materials Letters 285 (2021) 129203, https://doi.org/10.1016/j.matlet.2020.129203 |
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| 18 | Statistical analysis of current–voltage characteristics in Au/Ta2O5/ n‑GaN Schottky barrier heterojunction using different methods | Applied Physics A (2021) 127:46, https://doi.org/10.1007/s00339-020-04173-2 |
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| 19 | Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector | Materials Science in Semiconductor Processing, Volume 117, October 2020, 105190, https://doi.org/10.1016/j.mssp.2020.105190 | |
| 20 | Evaluation of electrical parameters of Ni/ n-type Si Schottky barrier diodes using polyvinyl alcohol (PVA) as an interfacial layer | AIP Conference Proceedings 2269, 030098 (2020); https://doi.org/10.1063/5.0019609 | |
| 21 | Near infrared broadband and visible upconversion emissions of erbiumions inoxyfluoride glasses for optical amplifier applications | Optics & Laser Technology, Volume 127, July 2020, 106167, https://doi.org/10.1016/j.optlastec.2020.106167 | |
| 22 | Analysis of Double Gaussian Distributionat the Interface of Ni/Ta2O5/P-Si SchottkyBarrier Diodes Using Temperature Dependent Current-Voltage (I-V)Measurements | Silicon ISSN 1876-990X,DOI 10.1007/s12633-020-00407-3, https://doi.org/10.1007/s12633-020-00407-3 | |
| 23 | Transformation of g-C3N4 into onion like carbon on nickel nanoparticles for ultrafast hydrogenation | Materials Chemistry and Physics 240 (2020) 122157, https://doi.org/10.1016/j.matchemphys.2019.122157 | |
| 24 | Optical and spectroscopic properties of Ho3+-doped fluorophosphate glasses for visible lighting applications | Materials Research Bulletin 124 (2020) 110753, https://doi.org/10.1016/j.materresbull.2019.110753 | |
| 25 | An Assessment on Electrical Characterization of Ni/n-SiSCHOTTKY Rectifiers With and Without Ta2O5 Interfacial Oxide Layer | World Scientific Publishing Company, DOI: 10.1142/S0218625X19500732, January 8, 2019, WSPC/149-SRL 1950073 ISSN: 0218-625X | |
| 26 | Evaluation of temperature dependent electrical transport parameters in Fe3O4/SiO2/n-Si metal–insulator-semiconductor (MIS) type Schottky barrier heterojunction in a wide temperature range | Journal of Materials Science: Materials in Electronics http://doi.org/10.1007/s10854-019-01223-1 |
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| 27 | Impact of annealing process on electrical characteristics of Ni Schottky rectifiers fabricated on p-type Si | J. Indian Chem. Soc., Vol. 96, January 2019, pp. 85-89 | |
| 28 | Influence of post deposition annealing on structural and electrical properties of magnetron sputtered Al/(Ta2O5)0.85(TiO2)0.15/p-Si structure | Journal of Optoelectronics and Advanced Materials, Vol. 16, No. 11-12, 1295 – 1299, Dec. 2014. | 21 |
| 29 | Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors, Surface and Interface Analysis | Vol. 46, pp: 465-471, 2014. | 19 |
| 30 | Electrical transport parameters of Pt/Au Schottky contacts on n-type InP in a wide temperature range | Optoelectronics and Advanced Materials -Rapid Communications, Vol. 4, 2010, p. 1229-1238. | 19 |
| 31 | Electrical characteristics and interfacial reactions of rapidly annealed Pt/Ru Schottky contacts on n-type GaN | Physica Status Solidi A, Vol. 208, 2011, p. 1670–1677. | 19 |
| 32 | Effect of annealing temperature on electrical, structural and surface morphology characteristics of Ru/Pd/n-GaNSchottky barrier diodes | Materials Chemistry and Physics, Vol. 130, 2011, p. 1000-1006. | 17 |
| 33 | Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I-V-T and C-V-T measurements | Bulletin of Material Science, Vol. 35, 2012, p. 53-61. | 22 |
| 34 | Thermal annealing behaviour on electrical properties of Pd/Ru Schottkycontacts on type GaN | Journal of Nano-Electron Physics, Vol. 3, 2011, p. 921-925. | 15 |
| 35 | Schottky barrier parameters of Pd/Ticontacts on n-type InP revealed from I-V-T and C-V-T measurements | Journal of Modern Physics, Vol. 2, 2011, p. 113-123. | 16 |
| 36 | Current transport mechanisms in Ru/Pd/n-GaNSchottky barrier diodes and deep level defect studies | Superlattices and Microstructures, Vol.52, 2012, p.484-499. | 8 |
| 37 | Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors | Surface and interface analysis, Vol: 46, 2014, p. 465-471. | 27 |
| 38 | Structural, optical and electrical properties of DC reactive magnetron sputtered (Ta2O5)1−x(TiO2)x thin films | Ceramic International, 42 (2016) 18870–18878. | 18 |
| 39 | Fabrication of Cast Aluminium-Silicon (Al-Si) and Aluminium-Magnesium (Al-Mg) Alloys and their Properties | Vol 22, No 4 (2016): Acta Metallurgica Slovaca | 25 |
| 40 | Thickness Dependent Structural and Electrical properties of Magnetron Sputtered Nanostructured CrN Thin Films | Materials Reserach, Mat. Res. vol.20 no.3 São Carlos May/June 2017 Epub Apr 10, 2017 | 25 |
| 41 | Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal-insulator-semiconductor structure | Journal of Alloys and Compounds, Vol: 718, 2017, p. 104-111. | 16 |
| 42 | Zr-doped SnO2 thin films synthesized by spray pyrolysis technique for barrier layers in solar cells | Appl. Phys. A (2017) 123:761 DOI 10.1007/s00339-017-1391-6, Vol.:(0123456789) 1 3 | 22 |
| 43 | Influence of substrate bias voltage on crystallographic structure, optical and electronic properties of A1(Ta2O5)0.85(TiO2)0.15/p-Si MIS Schottky barrier diodes fabricated by dc magentron sputtering | Materials Science in Semiconductor Processing, Vol 76, Iss p 80-86 | 14 |
| 44 | Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure | Silicon Springer Netherlands, Print: ISSN 1876-990X, Online: ISSN 1876-9918, http://doi.org/10.1007/s12633-018-9840-1 | 17 |
| 45 | Synthesis and photocatalytic activity of bismuth carbonate micro-nanoplates | Inorganic Chemistry Communications Volume 143, September 2022, 109820, https://doi.org/10.1016/j.inoche.2022.109820 | |
| 46 | Investigations on Functional Properties of Al0.8 EuyLa0.2−y TiO3 (y=0.01−0.04) Nanoparticles Synthesized by Hydrothermal Method | WSPC/149-SRL 2250097 ISSN: 0218-625X, https://doi.org/10.1142/S0218625X22500974 |
Book Chapters & Publications
- “A Study on Platinum/Gold Schottky Contacts to n-type Indium Phosphide” N. Nanda Kumar Reddy By German publisher LAP (Lambert Academic Publishing) ISBN-13: 978-3-659-45174-4, ISBN-10: 3659451746, EAN: 9783659451744, August, 2013.
- “Studies of Pt/Ru and Pd/Ru Schottky contacts to n-type Gallium Nitride” N. Nanda Kumar Reddy and V. Rajagopal Reddy Scholar’s Press, Germany, ISBN: 978-3-659-84344-0. October, 2016.
- “Studies on Cast Aluminium-Silicon and Aluminium-Magnesium Alloys” Harish Sharma Akkera, Nallabala Nanda Kumar Reddy, M. Gunasekhar Reddy, C. Yuvaraj VSRD Academic Publishing, ISBN-13: 978-93-87610-08-8 July, 2018.
- “Types of Photodetectors and their applications” Editors: Dr. Sunil Singh Kushvaha & Dr. Vidya Nand Singh-Principal Scientists, CSIR-National Physical Laboratory, New Delhi, India Book Chapter-8: by N. Nanda Kumar Reddy and Venkata Krishnaiah Kummara Nova Science Publishers, USA. With DOI: https://doi.org/10.52305/QTIQ1152, Indexed in: SCOPUS March, 2022.
Industrial visits, Conferences & Workshops attended
- A Two Day National Workshop "X-ray Diffraction and Rietveld Refinement" was organised by The Centre for Functional Materials (CFM), Vellore Institute of Technology, Vellore on 10th & 11th August 2023.
- International Conference on Purification and Recycling of Electronic Materials, (ICPREM) 2020 was organized by Center for Materials for Electronics Technology (CMET)-Hyderabad during February, 8-10, 2020.
- International Conference on Recent Advances in Applied Sciences, (ICRAAS) 2019 was organized by Reva University, Bengaluru on 17 - 18 October 2019.
- 3rd International Conference on Advanced Materials (ICAM)-2019 during August 9-11, 2019 was organized by International Unit on Macromolecular Science and Engineering (IUMSE), Mahatma Gandhi University, Kerala, India.
- 2nd International Conference on Advances in New Materials – ICAN 2018) was organized by the Department of Inorganic Chemistry, University Of Madras, Guindy, India during June 8-9, 2018.
- International Conference on Advanced Semiconductor Materials and Devices (ICASMD–2018) was organized by the Centre for Materials for Electronics Technology (C-MET) during March 8-10, 2018.
- Industrial visit to National Atmospheric Research Laboratory (NARL), Dept of Space, Govt of India, Gadanki organized for I.B.Tech, II-Semester, ECE-A Students on 07 April 2017.
- International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2016) was organized by Indian Institute of Science, Bangalore on 11 -15 December-2016.
- Nanofiber workshop held at Indian Institute of Technology, Hyderabad (IITH) during 4th and 5th of July, 2014.
- India’s Flagship Nanotech Event - 3 day conference on 6th Bangalore India Nano was organized by the Department of IT, Biotechnology and Science & Technology, Government of Karnataka under the able guidance of the Vision Group on Nanotechnology from 4th to 6th December 2013.