Dr. N. Nanda Kumar Reddy

Qualification : Ph.D. (S V University, Tirupati)

Details of Educational Qualification:

Course Specialization Group College Name/University Year of Passing
Ph.D. Studies on Electrical & Structural Properties of GaN based Schottky Barrier Diodes Material Science Sri Venkateswara University 2013
M.Phil. Schottky Contacts to InP Semiconductor at Cryogenic Temperatures Material Science Sri Venkateswara University 2010
M.Sc. Condensed matter physics and electronics Physics Sri Venkateswara University 2006
B.Sc. Maths, Physics, Computer Science M.P.C.S Sri Venkateswara University 2003



Research Project

S.No Name of the Principal Investigator Department Sanctioned Letter Number with date Project Title Duration of the Project Total Sanctioned Amount
1 Dr.Nanda Kumar Reddy Physics File No. ECR/2017/002868, dated:20.09.2018 Development of High Photoresponsivity Gallium Nitride-Based Metal/Insulator/Semiconductor (MIS) Schottky Barrier Ultraviolet Photodetectors 3 years Rs.43,89,784/-



My Publications

S.No Title of the Paper Full Details of Journal Name / Conference Name, Volume number, page number, Date Overall similarity % Index received from Turnitin
1 Self-powered and improved photoresponsive broadband photodetecting sensors using Au/NiFe2O4/p-Si heterojunction architecture Materials Science in Semiconductor Processing 156 (2023) 107266, https://doi.org/10.1016/j.mssp.2022.107266
2 Enhanced photoresponse performance in GaN based symmetric type MSM ultraviolet-A and MIS ultraviolet-A to C photodetectors Sensors and Actuators A: Physical Volume 339, 1 June 2022, 113502, https://doi.org/10.1016/j.sna.2022.113502
3 Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN Materials Science in Semiconductor Processing, Volume 138, February 2022, 106297, https://doi.org/10.1016/j.mssp.2021.106297
4 Onion-Ring-like Carbon and Nitrogen from ZIF‑8 on TiO2/Fe2O3Nanostructure for Overall Electrochemical Water Splitting The Journal of Physical Chemistry Letters, J.Phys.Chem.Lett.2021, 12, 5909−5918, https://doi.org/10.1021/acs.jpclett.1c01
5 A Study on Annealing Process Influenced Electrical Properties of Ni/CeO2/p-Si/Al Schottky Barrier Diodes Macromol. Symp. 2021, 398, 2000228, https://doi.org/10.1002/masy.202000228
6 Role of excitation wavelength and dopant concentration on white light tunability of dysprosium doped titania-fluorophosphate glasses Optical Materials 111 (2021) 110593,
7 Influence of Ga doping on structural, optical and electrical properties of transparent conducting SnO2 thin films Optik-International Journal for Light and Electron Optics 226 (2021) 165859,
8 High performance, self-powered and thermally stable 200–750 nm spectral responsive gallium nitride (GaN) based broadband photodetectors Solar Energy Materials & Solar Cells 225 (2021) 111033,
9 Electrochemical performance of coin cell-type symmetric supercapacitor electrode consisting of three-dimensional molybdenum disulfide microflowers Materials Letters 285 (2021) 129203,
10 Statistical analysis of current–voltage characteristics in Au/Ta2O5/ n‑GaN Schottky barrier heterojunction using different methods Applied Physics A (2021) 127:46,
11 Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector Materials Science in Semiconductor Processing, Volume 117, October 2020, 105190, https://doi.org/10.1016/j.mssp.2020.105190
12 Evaluation of electrical parameters of Ni/ n-type Si Schottky barrier diodes using polyvinyl alcohol (PVA) as an interfacial layer AIP Conference Proceedings 2269, 030098 (2020); https://doi.org/10.1063/5.0019609
13 Near infrared broadband and visible upconversion emissions of erbiumions inoxyfluoride glasses for optical amplifier applications Optics & Laser Technology, Volume 127, July 2020, 106167, https://doi.org/10.1016/j.optlastec.2020.106167
14 Analysis of Double Gaussian Distributionat the Interface of Ni/Ta2O5/P-Si SchottkyBarrier Diodes Using Temperature Dependent Current-Voltage (I-V)Measurements Silicon ISSN 1876-990X,DOI 10.1007/s12633-020-00407-3, https://doi.org/10.1007/s12633-020-00407-3
15 Transformation of g-C3N4 into onion like carbon on nickel nanoparticles for ultrafast hydrogenation Materials Chemistry and Physics 240 (2020) 122157, https://doi.org/10.1016/j.matchemphys.2019.122157
16 Optical and spectroscopic properties of Ho3+-doped fluorophosphate glasses for visible lighting applications Materials Research Bulletin 124 (2020) 110753, https://doi.org/10.1016/j.materresbull.2019.110753
17 An Assessment on Electrical Characterization of Ni/n-SiSCHOTTKY Rectifiers With and Without Ta2O5 Interfacial Oxide Layer World Scientific Publishing Company, DOI: 10.1142/S0218625X19500732, January 8, 2019, WSPC/149-SRL 1950073 ISSN: 0218-625X
18 Evaluation of temperature dependent electrical transport parameters in Fe3O4/SiO2/n-Si metal–insulator-semiconductor (MIS) type Schottky barrier heterojunction in a wide temperature range Journal of Materials Science: Materials in Electronics
19 Impact of annealing process on electrical characteristics of Ni Schottky rectifiers fabricated on p-type Si J. Indian Chem. Soc., Vol. 96, January 2019, pp. 85-89
20 Influence of post deposition annealing on structural and electrical properties of magnetron sputtered Al/(Ta2O5)0.85(TiO2)0.15/p-Si structure Journal of Optoelectronics and Advanced Materials, Vol. 16, No. 11-12, 1295 – 1299, Dec. 2014. 21
21 Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors, Surface and Interface Analysis Vol. 46, pp: 465-471, 2014. 19
22 Electrical transport parameters of Pt/Au Schottky contacts on n-type InP in a wide temperature range Optoelectronics and Advanced Materials -Rapid Communications, Vol. 4, 2010, p. 1229-1238. 19
23 Electrical characteristics and interfacial reactions of rapidly annealed Pt/Ru Schottky contacts on n-type GaN Physica Status Solidi A, Vol. 208, 2011, p. 1670–1677. 19
24 Effect of annealing temperature on electrical, structural and surface morphology characteristics of Ru/Pd/n-GaNSchottky barrier diodes Materials Chemistry and Physics, Vol. 130, 2011, p. 1000-1006. 17
25 Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I-V-T and C-V-T measurements Bulletin of Material Science, Vol. 35, 2012, p. 53-61. 22
26 Thermal annealing behaviour on electrical properties of Pd/Ru Schottkycontacts on type GaN Journal of Nano-Electron Physics, Vol. 3, 2011, p. 921-925. 15
27 Schottky barrier parameters of Pd/Ticontacts on n-type InP revealed from I-V-T and C-V-T measurements Journal of Modern Physics, Vol. 2, 2011, p. 113-123. 16
28 Current transport mechanisms in Ru/Pd/n-GaNSchottky barrier diodes and deep level defect studies Superlattices and Microstructures, Vol.52, 2012, p.484-499. 8
29 Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors Surface and interface analysis, Vol: 46, 2014, p. 465-471. 27
30 Structural, optical and electrical properties of DC reactive magnetron sputtered (Ta2O5)1−x(TiO2)x thin films Ceramic International, 42 (2016) 18870–18878. 18
32 Thickness Dependent Structural and Electrical properties of Magnetron Sputtered Nanostructured CrN Thin Films Materials Reserach, Mat. Res. vol.20 no.3 São Carlos May/June 2017 Epub Apr 10, 2017 25
33 Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal-insulator-semiconductor structure Journal of Alloys and Compounds, Vol: 718, 2017, p. 104-111. 16
34 Zr-doped SnO2 thin films synthesized by spray pyrolysis technique for barrier layers in solar cells Appl. Phys. A (2017) 123:761 DOI 10.1007/s00339-017-1391-6, Vol.:(0123456789) 1 3 22
35 Influence of substrate bias voltage on crystallographic structure, optical and electronic properties of A1(Ta2O5)0.85(TiO2)0.15/p-Si MIS Schottky barrier diodes fabricated by dc magentron sputtering Materials Science in Semiconductor Processing, Vol 76, Iss p 80-86 14
36 Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure Silicon Springer Netherlands, Print: ISSN 1876-990X, Online: ISSN 1876-9918, http://doi.org/10.1007/s12633-018-9840-1 17
37 Synthesis and photocatalytic activity of bismuth carbonate micro-nanoplates Inorganic Chemistry Communications Volume 143, September 2022, 109820, https://doi.org/10.1016/j.inoche.2022.109820
38 INVESTIGATIONS ON FUNCTIONAL PROPERTIES OF Al0.8 EuyLa0.2−y TiO3 (y=0.01−0.04) NANOPARTICLES SYNTHESIZED BY HYDROTHERMAL METHOD WSPC/149-SRL 2250097 ISSN: 0218-625X, https://doi.org/10.1142/S0218625X22500974



Book Chapters & Publications

  • “A Study on Platinum/Gold Schottky Contacts to n-type Indium Phosphide” N. Nanda Kumar Reddy By German publisher LAP (Lambert Academic Publishing) ISBN-13: 978-3-659-45174-4, ISBN-10: 3659451746, EAN: 9783659451744, August, 2013.
  • “Studies of Pt/Ru and Pd/Ru Schottky contacts to n-type Gallium Nitride” N. Nanda Kumar Reddy and V. Rajagopal Reddy Scholar’s Press, Germany, ISBN: 978-3-659-84344-0. October, 2016.
  • “STUDIES ON CAST ALUMINUM-SILICON AND ALUMINUM-MAGNESIUM ALLOYS” Harish Sharma Akkera, Nallabala Nanda Kumar Reddy, M. Gunasekhar Reddy, C. Yuvaraj VSRD Academic Publishing, ISBN-13: 978-93-87610-08-8 July, 2018.
  • “Types of Photodetectors and their applications” Editors: Dr. Sunil Singh Kushvaha & Dr. Vidya Nand Singh-Principal Scientists, CSIR-National Physical Laboratory, New Delhi, India Book Chapter-8: by N. Nanda Kumar Reddy and Venkata Krishnaiah Kummara Nova Science Publishers, USA. With DOI: https://doi.org/10.52305/QTIQ1152, Indexed in: SCOPUS March, 2022.


Industrial visits, Conferences & Workshops attended

  • International Conference on Purification and Recycling of Electronic Materials, (ICPREM) 2020 was organized by Center for Materials for Electronics Technology (CMET)-Hyderabad during February, 8-10, 2020.
  • International Conference on Recent Advances in Applied Sciences, (ICRAAS) 2019 was organized by REVA UNIVERSITY, BENGALURU on 17 - 18 October 2019.
  • 3rd International Conference on ADVANCED MATERIALS (ICAM)-2019 during August 9-11, 2019 was organized by International Unit on Macromolecular Science and Engineering (IUMSE), Mahatma Gandhi University, Kerala, India.
  • 2nd International Conference on Advances in New Materials – ICAN 2018) was organized by the Department of Inorganic Chemistry, University Of Madras, Guindy, India during June 8-9, 2018.
  • International Conference on Advanced Semiconductor Materials and Devices (ICASMD–2018) was organized by the Centre for Materials for Electronics Technology (C-MET) during March 8-10, 2018.
  • Industrial visit to National Atmospheric Research Laboratory (NARL), Dept of Space, Govt of India, Gadanki organized for I.B.Tech, II-Semester, ECE-A Students on 07 April 2017.
  • International Conference of Young Researchers on Advanced Materials (IUMRS-ICYRAM 2016) was organized by Indian Institute of Science, Bangalore on 11 -15 December-2016.
  • Nanofiber workshop held at Indian Institute of Technology, Hyderabad (IITH) during 4th and 5th of July, 2014.
  • India’s Flagship Nanotech Event - 3 day conference on 6th Bangalore India Nano was organized by the Department of IT, Biotechnology and Science & Technology, Government of Karnataka under the able guidance of the Vision Group on Nanotechnology from 4th to 6th December 2013.