Dr. Rajib Kumar Nanda
Qualification : Ph.D. (NIT, Agartala)
Designation : Asst. Professor
Email: [email protected]
Details of Educational Qualification:
| Course | Specialization | Branch | Institute / University | Year of Passing |
|---|---|---|---|---|
| Ph.D. | Semiconductor Nanotechnology and Optoelectronic Devices | Electronics and Communication Engineering | National Institute of Technology, Agartala | 2026 |
| M.Tech. | VLSI | Electronics and Communication Engineering | Indian Institute of Technology, Kharagpur | 2015 |
| B.Tech. | Electronics and Telecommunication Engineering | Electronics and Telecommunication Engineering | VSSUT (formerly UCE) Burla | 2008 |
Research Areas:
- Nanostructured Materials for Optoelectronic Devices
- Photodetectors and Surface Wettability Engineering
- Thin Film Deposition and Characterization
- Semiconductor Device Modelling and Simulation
Research Identifiers:
- Scopus ID: https://www.scopus.com/authid/detail.uri?authorId=57189387655
- Vidwan ID: https://vidwan.inflibnet.ac.in/profile/256303
- Google scholar ID: https://scholar.google.com/citations?hl=en&user=xClt1jwAAAAJ
- h-Index (as per Scopus data): 05
Publication Details:
| S.No | Publication Affiliation | Academic Year | Author Position | Details of Research Publication | Indexing | Publication | Journal Quartile (Q1/Q2/Q3/Q4) |
|---|---|---|---|---|---|---|---|
| 1 | Others | 2025-26 | 1 | GLAD-grown TiO2/SnO2 nanowire heterostructure for enhanced fast-switching photodetection. DOI: https://doi.org/10.1364/AO.570442 | SCIE | Article | Q3 |
| 2 | Others | 2023-24 | 1 | E-Beam Synthesized Fast Switching TiO2/SnO2 Type-II Heterostructure Photodetector. DOI: https://doi.org/10.1364/AO.522709 | SCIE | Article | Q3 |
| 3 | Others | 2022-23 | 1 | Effect of High–Temperature Annealing on Au Thin Film/TiO2 Nanowires for Enhanced Photodetection. DOI: https://doi.org/10.1109/TNANO.2023.3328862 | SCIE | Article | Q2 |
| 4 | Others | 2022-23 | 1 | Morphological, Optical, and Surface Wettability Analysis of Electron-Beam Synthesized Annealed TiO2 NW/Au TF DOI: https://doi.org/10.1007/s13538-023-01299-5 | SCIE | Article | Q3 |
| 5 | Others | 2021-22 | 3 | Fast Response UV Detector by Vertically Allied ZrO2 Nanowire Array Through Glancing Angle Deposition.DOI: https://doi.org/10.1109/LPT.2021.3083090 | SCIE | Article | Q2 |
| 6 | Others | 2020-21 | 5 | Enhancing Detectivity of Indium-Oxide-Based Photodetectors via Vertical Nanostructuring Through Glancing Angle Deposition.DOI: https://doi.org/10.1007/s11664-021-08889-6 | SCIE | Article | Q2 |
| 7 | Others | 2019 -20 | 2 | Strain engineering in AlGaN/GaN HEMTs for performance enhancement.DOI: https://doi.org/10.1504/IJNBM.2020.107414 | Scopus | Article | Q4 |
| 8 | Others | 2018 -19 | 4 | Reliability studies on biaxially tensile strained-Si channel p-MOSFETs.DOI: https://doi.org/10.1504/IJMMP.2019.098113 | Scopus | Article | Q4 |
| 9 | Others | 2019 -20 | 1 | Atomistic level process to device simulation of GaNFET using TNL TCAD tools.DOI: https://doi.org/10.1007/978-981-15-5262-5_61 | Scopus | Conference Proceedings | None |
| 10 | Others | 2019 -20 | 4 | Dual-Band Circular Polarized Printed Antenna for WiMAX and LTE Applications DOI: https://doi.org/10.1109/iSES47678.2019.00085 | Scopus | Conference Proceedings | None |
| 11 | Others | 2017 -18 | 3 | Silicon–Germanium channel heterostructure p-MOSFETs DOI: https://doi.org/10.1007/978-981-10-5565-2_32 | Scopus | Conference Proceedings | None |
| 12 | Others | 2017 -18 | 3 | Study of strained-Si/SiGe channel p-MOSFETs using TCAD DOI: https://doi.org/10.1007/978-981-10-5565-2_16 | Scopus | Conference Proceedings | None |
| 13 | Others | 2016 -17 | 4 | Electron mobility modeling in strained-Si n-MOSFETs using TCAD DOI: https://doi.org/10.1109/INDICON.2016.7839160 | Scopus | Conference Proceedings | None |
| 14 | Others | 2015 -16 | 1 | Noise characterization of silicon-germanium HBTs DOI: https://doi.org/10.1109/ICMOCE.2015.7489747 | Scopus | Conference Proceedings | None |
| 15 | Others | 2015 -16 | 1 | Beyond silicon: Strained-SiGe channel FinFETs DOI: https://doi.org/10.1109/MAMI.2015.7456578 | Scopus | Conference Proceedings | None |